1 of 7 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems ldmos vbat bias control & pa/v mode enable rf out rf in vmode1 ven vmode0 vcc cpl in cpl out gnd 5 4 1 2 3 6 7 10 9 8 RF7222 3v w-cdma band 2 linear pa module the RF7222 is a high-power, high-efficiency, linear power amplifier designed for use as the final rf amplifier in 3v, 50 ? w-cdma mobile cel- lular equipment and spread-spectrum systems. this pa is developed for umts band 2 which operates in the 1850mhz to 1910mhz frequency band. the RF7222 has two digital control pins, providing the option of one of three power modes to optimize performance and current drain at lower power levels. the part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. the RF7222 is fully hsdpa and hspa+ comp liant and is assembled in a 10- pin, 3mmx3mm module. features ? hsdpa and hspa+ compliant ? low voltage positive bias supply (3.0v to 4.35v) ? +28.5dbm linear output power (+27.0dbm hsdpa and hspa+) ? high efficiency operation 39% at p out =+28.5dbm 19% at p out =+19.0dbm (without dc/dc converter) ? low quiescent current in low power mode: 17ma ? internal voltage regulator eliminates need for external reference voltage (v ref ) ? 3-mode power states with digital control interface ? integrated power coupler ? integrated blocking and col- lector decoupling capacitors applications ? wcdma/hsdpa/hsupa wireless handsets and data cards ? dual-mode umts wireless handsets RF7222 3v w-cdma band 2 linear pa module RF7222pcba-410 fully assembled evaluation board prelim ds110228 ? package style: module, 10-pin, 3mmx3mmx1.0mm
2 of 7 RF7222 prelim ds110228 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage in standby mode 6.0 v supply voltage in idle mode 6.0 v supply voltage in operating mode, 50 ? load 6.0 v supply voltage, v bat 6.0 v control voltage, vmode0, vmode1 3.5 v control voltage, v en 3.5 v rf - input power +6 dbm rf - output power +30 dbm output load vswr (ruggedness) 10:1 operating ambient temperature -30 to +110 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. recommended operating conditions operating frequency range 1850 1910 mhz v bat +3.0 +3.4 +4.35 v v cc +3.0 1 +3.4 +4.35 v v en 0 0.5 v pa disabled. 1.4 1.8 3.0 v pa enabled. v mode0 , v mode1 0 0.5 v logic ?low?. 1.5 1.8 3.0 v logic ?high?. p out maximum linear output (hpm) 28.5 2,3 dbm high power mode (hpm) maximum linear output (mpm) 19.0 2,3 dbm medium power mode (mpm) maximum linear output (lpm) 8.0 2,3 dbm low power mode (lpm) ambient temperature -30 +25 +85 c notes : 1. minimum v cc for max p out is indicated. 2. for operation at v cc =+3.2v, derate p out by 0.6db. for operation at v cc =3.0v, derate p out by 1.3db. 3. p out is specified for 3gpp (voice) modulation. for hsdpa and hspa+ operation, derate p out by 1.5db: hsdpa configuration: ? c ? 12, ? d ? 15, ? hs ? 24 hspa+ configuration: rel7 subtest 1 caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 7 RF7222 prelim ds110228 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. electrical specifications t=+25 ? c, v cc =v bat =+3.4v, v en =+1.8v, 50 ? system, wcdma rel 99 modulation unless otherwise specified. gain 25.0 26.5 db hpm, p out =28.5dbm 15 17.5 db mpm, p out ? 19.0dbm 10.5 14.5 db lpm, p out ? 8.0dbm gain linearity 0.2 db hpm, 19.0dbm ? p out ? 28.5dbm aclr - 5mhz offset -39 -36 dbc hpm, p out =28.5dbm -42 -36 dbc mpm, p out =19.0dbm -42 -36 dbc lpm, p out =8.0dbm aclr - 10mhz offset -52 -47 dbc hpm, p out =28.5dbm -58 -47 dbc mpm, p out =19.0dbm -60 -47 dbc lpm, p out =8.0dbm pae without dc/dc converter 35 39 % hpm, p out =28.5dbm 16 19 % mpm, p out =19.0dbm current drain 80 ma mpm, p out =16.0dbm 38 ma lpm, p out =8.0dbm 20 ma lpm, p out =0.0dbm quiescent current 85 125 ma hpm, dc only 20 28 ma mpm, dc only 17 24 ma lpm, dc only enable current 0.3 1.0 ma source or sink current. v en =1.8v. mode current (i mode0 , i mode1 ) 0.3 1.0 ma source or sink current. v mode0 , v mode1 =1.8v. leakage current 5.0 15.0 ? a dc only. v cc =v bat =4.35v, v en =v mode0 =v mode1 =0.5v. noise power in receive band -137 -134 dbm/hz all powe r modes, measured at du plex offset frequency (ftx+80mhz). rx: 1930mhz to 1990mhz, p out ? 28.5dbm input impedance 1.7:1 vswr no ext. matching, p out ? 28.5dbm, all modes. harmonic, 2fo -27 -15 dbm p out ? 28.5dbm, all power modes. harmonic, 3fo -35 -20 dbm p out ? 28.5dbm, all power modes. spurious output level -70 dbc all spurious, p out ? 28.5dbm, all conditions, load vswr ? 6:1, all phase angles. insertion phase shift -30 +30 phase shift at 19dbm when switching from hpm to mpm and mpm to lpm at 8dbm. dc enable time 10 ? s dc only. time from v en =high to stable idle current (90% of steady state value). rf rise/fall time 6 ? sp out ? 28.5dbm, all modes. 90% of target, dc settled prior to rf. coupling factor 19.5 db p out ? 28.5dbm, all modes. coupling accuracy - temp/voltage 0.5 db p out ? 28.5dbm, all modes. -30c ? t ? 85c, 3.0v ? v cc & v bat ? 4.35v, referenced to 25c, 3.4v conditions. coupling accuracy - vswr 0.7 db p out ? 28.5dbm, all modes, load vswr=2:1, 0.7db accuracy corresponds to 12db directivity. coupler termi- nation resistance=33 ? .
4 of 7 RF7222 prelim ds110228 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing pin function description 1vbat supply voltage for bias circuitry and the first stage amplifier. 2rf in rf input internally matched to 50 ? and dc blocked. input matching includes a shunt inductor to ground which would short dc voltage placed on this pin. 3vmode1 digital control input for power mode sele ction (see operating modes truth table). 4vmode0 digital control input for power mode sele ction (see operating modes truth table). 5ven digital control input for pa enable and disable (see operating modes truth table). 6 cpl_out coupler output. 7gnd this pin must be grounded. 8 cpl_in coupler input used for cascad ing couplers in series. terminate this pin with a 50 ? resistor if not connected to another coupler. 9rf out rf output internally matched to 50 ?? and dc blocked. 10 vcc supply voltage for first and second stage amplifier. pkg base gnd ground connection. the package backside should be soldered to a topside ground pad connecting to the pcb ground plane with multiple ground vias. the pad should have a low thermal resistance and low electrical imped- ance to the ground plane. v en v mode0 v mode1 v bat v cc conditions/comments low low low 3.0v to 4.35v 3.0v to 4.35v power down mode low x x 3.0v to 4.35v 3.0v to 4.35v standby mode high low low 3.0v to 4.35v 3.0v to 4.35v high power mode high high low 3.0v to 4.35v 3.0v to 4.35v medium power mode high high high 3.0v to 4.35v 3.0v to 4.35v low power mode
5 of 7 RF7222 prelim ds110228 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . preliminary application schematic v bat vmode1 vmode0 ven c11 2 10nf c10 2 10nf c9 2 10nf c7 2 10nf c5 4.7uf v cc c8 2 10nf c6 4.7uf c4 22uf notes: 1. place these capacitors as close to pa as possible. 2. 50 ? resistor will be removed if pin 8 is connected to another coupler. coupler directivity can be improved with r2 = 33 ? j2 rf out j3 cpl out j1 rf in bias control & pa/v mode enable 5 4 1 2 3 6 7 10 9 8 r2 3 50 ?
6 of 7 RF7222 prelim ds110228 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirica l data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land pattern (top view) note: shaded area represents pin
7 of 7 RF7222 prelim ds110228 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommod ate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or requ ested from the pcb fabrication supplier. pcb solder mask pattern (top view) thermal pad and via design the pcb land pattern has been designed with a thermal pad th at matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. note: shaded area represents pin 1 location.
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